Reference: DS-UESSD120G-T100I 0
Brand: HIKVISION
SSD PORTABIL HIKVISION DS-UESSD120G-T100I 120GB
SSD portabil Hikvision; Capacitate 120GB; Viteza de citire: 450 MB/s; Viteza de scriere: 340 MB/s.
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Hard disk SSD❤️ provine de la ❤️solid-state drive❤️ si este un dispozitiv media de stocare nonvolatil care salveaza datele pe o memorie flash solid-state (unitate cu cipuri). Sunt doua componente principale care alcatuiesc un SSD, si anume: un controler flash si chipuri de memorie flash NAND. Configuratia unui SSD este optimizata astfel incat sa furnizeze o inalta performanta in scriere si citire pentru orice tip de solicitare, fie ea secventiala sau aleatorie. Spre deosebire de un hard disk clasic, un SSD nu include componente care se pot sparge.
There are 21 products.
Reference: DS-UESSD120G-T100I 0
Brand: HIKVISION
SSD portabil Hikvision; Capacitate 120GB; Viteza de citire: 450 MB/s; Viteza de scriere: 340 MB/s.
Reference: SSDSC2KW512G8X1 3
Brand: INTEL
SSD Intel, 512GB, 545 Series, Generic Single Pack, SATA3, rata transfer r/w: 550/440 mb/s, 2.5", Memory Type: 3D TLC
Reference: SSDSC2KW128G8X1 3
Brand: INTEL
SSD Intel, 128GB, 545 Series, Generic Single Pack, SATA3, rata transfer r/w: 550/440 mb/s, 2.5", Memory Type: 3D TLC.
Reference: SSDSC2KW256G8XT 3
Brand: INTEL
SSD Intel, 256GB, 545 Series, SATA3, rata transfer r/w: 550/500 mb/s, 2.5"
Reference: SSDSC2KW256G8X1 3
Brand: INTEL
SSD Intel, 256GB, 545 Series, Generic Single Pack, SATA3, rata transfer r/w: 550/500 mb/s, 2.5", Memory Type: 3D TLC.
Reference: SSDPEKKW020T8X1 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2.05 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Reference: SSDPEKKW256G801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare256 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate205000 IOPSMaximum Random Write Rate265000 IOPSMaximum Sequenti
Reference: SSDPEKKW128G801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare128 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate105000 IOPSMaximum Random Write Rate160000 IOPSMaximum Sequenti
Reference: SSDPEKKW512G801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequenti
Reference: SSDPEKNW020T8X1 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
Reference: SSDPEKNW010T8X1 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
Reference: SSDSC2KW512G8X1 A
Brand: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate75000 IOPSMaximum Rando
Reference: SSDSC2KW128G8X1 A
Brand: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare128 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate70000 IOPSMaximum Rando
Reference: SSDPEKNW010T9X1 A
Brand: INTEL
Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCI Express 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate160000 IOPSMaximum Random Write Ra
Reference: SSDPEKKW010T8X1 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1.02 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Reference: SSDPEKNW020T801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write