Reference: SSDSC2KW512G8X1 3
Brand: INTEL
IN SSD 512GB SATA III SSDSC2KW512G8X1
SSD Intel, 512GB, 545 Series, Generic Single Pack, SATA3, rata transfer r/w: 550/440 mb/s, 2.5", Memory Type: 3D TLC
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Reference: SSDSC2KW512G8X1 3
Brand: INTEL
SSD Intel, 512GB, 545 Series, Generic Single Pack, SATA3, rata transfer r/w: 550/440 mb/s, 2.5", Memory Type: 3D TLC
Reference: SSDSC2KW128G8X1 3
Brand: INTEL
SSD Intel, 128GB, 545 Series, Generic Single Pack, SATA3, rata transfer r/w: 550/440 mb/s, 2.5", Memory Type: 3D TLC.
Reference: SSDSC2KW256G8XT 3
Brand: INTEL
SSD Intel, 256GB, 545 Series, SATA3, rata transfer r/w: 550/500 mb/s, 2.5"
Reference: SSD7CS900-120-PB 3
Brand: PNY
SSD PNY CS900 Series 2,5in SATA III 120GB Capacity 120 GB Form factor 2.5 inch Slim Height 7 mm Interface SATA III 6Gb/s; backwards compatible with SATA II 3Gb/s Max_sequential_read_speed Up to 515 MB/s Max_sequential_write_speed Up to 490 MB/s Mtbf 2 mil
Reference: SSDSC2KW256G8X1 3
Brand: INTEL
SSD Intel, 256GB, 545 Series, Generic Single Pack, SATA3, rata transfer r/w: 550/500 mb/s, 2.5", Memory Type: 3D TLC.
Reference: SSDPEKKW020T8X1 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2.05 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Reference: SSDPEKKW256G801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare256 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate205000 IOPSMaximum Random Write Rate265000 IOPSMaximum Sequenti
Reference: SSDPEKKW128G801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare128 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate105000 IOPSMaximum Random Write Rate160000 IOPSMaximum Sequenti
Reference: SSDPEKKW512G801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequenti
Reference: SSDPEKNW020T8X1 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
Reference: SSDPEKNW010T8X1 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
Reference: SSDSC2KW512G8X1 A
Brand: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate75000 IOPSMaximum Rando
Reference: SSDSC2KW128G8X1 A
Brand: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare128 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate70000 IOPSMaximum Rando
Reference: SSDPEKNW010T9X1 A
Brand: INTEL
Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCI Express 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate160000 IOPSMaximum Random Write Ra
Reference: SSDPEKKW010T8X1 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1.02 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Reference: SSDPEKNW020T801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write