Artikel-Nr.: SP390-4G-Plus
Marke: Sinopine
Camera IP 4G Sinopine SP390-4G-Plus
Camera IP 4G Sinopine SP390-4G-Plus Camera IP cu slot pentru sim card 4G si accesorii pentru alarma: 1 senzor PIR, 2 senzori de usa, 1 telecomanda.
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124,00 L - 1.543,00 L
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Tip lentila
Accepta SD Card
Accepta SD Card
Functie POE
Functie POE
Tip carcasa
Tip carcasa
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Functie audio
Tip mediu
Tip mediu
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Telecontrol / alarmare la distanta
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22 Artikel gefunden
Artikel-Nr.: SP390-4G-Plus
Marke: Sinopine
Camera IP 4G Sinopine SP390-4G-Plus Camera IP cu slot pentru sim card 4G si accesorii pentru alarma: 1 senzor PIR, 2 senzori de usa, 1 telecomanda.
Artikel-Nr.: SP390-4G
Marke: Sinopine
Camera IP 4G Sinopine SP390-4G - cu slot pentru sim card 4G
Artikel-Nr.: SSDSC2KW512G8X1 3
Marke: INTEL
SSD Intel, 512GB, 545 Series, Generic Single Pack, SATA3, rata transfer r/w: 550/440 mb/s, 2.5", Memory Type: 3D TLC
Artikel-Nr.: SSDSC2KW128G8X1 3
Marke: INTEL
SSD Intel, 128GB, 545 Series, Generic Single Pack, SATA3, rata transfer r/w: 550/440 mb/s, 2.5", Memory Type: 3D TLC.
Artikel-Nr.: SSDSC2KW256G8XT 3
Marke: INTEL
SSD Intel, 256GB, 545 Series, SATA3, rata transfer r/w: 550/500 mb/s, 2.5"
Artikel-Nr.: SSDSC2KW256G8X1 3
Marke: INTEL
SSD Intel, 256GB, 545 Series, Generic Single Pack, SATA3, rata transfer r/w: 550/500 mb/s, 2.5", Memory Type: 3D TLC.
Artikel-Nr.: SSDPEKKW020T8X1 A
Marke: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2.05 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Artikel-Nr.: SSDPEKKW256G801 A
Marke: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare256 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate205000 IOPSMaximum Random Write Rate265000 IOPSMaximum Sequenti
Artikel-Nr.: SSDPEKKW128G801 A
Marke: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare128 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate105000 IOPSMaximum Random Write Rate160000 IOPSMaximum Sequenti
Artikel-Nr.: SSDPEKKW512G801 A
Marke: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequenti
Artikel-Nr.: SSDPEKNW020T8X1 A
Marke: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
Artikel-Nr.: SSDPEKNW010T8X1 A
Marke: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
Artikel-Nr.: SSDSC2KW512G8X1 A
Marke: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate75000 IOPSMaximum Rando
Artikel-Nr.: SSDSC2KW128G8X1 A
Marke: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare128 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate70000 IOPSMaximum Rando
Artikel-Nr.: SSDPEKNW010T9X1 A
Marke: INTEL
Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCI Express 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate160000 IOPSMaximum Random Write Ra
Artikel-Nr.: SSDPEKKW010T8X1 A
Marke: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1.02 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent