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Intel SSD 660p Series (512GB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack
  • Intel SSD 660p Series (512GB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack

Intel SSD 660p Series (512GB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack

SSDPEKNW512G8X1 A
INTEL
Rating 
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate90000 IOPSMaximum Random Write
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Description

Locatia dispozitivuluiPlug-in Card
Factor de formaM.2 (2280)
Capacitate de stocare512 GB
Suporta canal de datePCIe NVMe 3.0 x4
Tehnologia pentru memorieNAND Flash
Flash Memory Cell TechnologyQuad-Level Cell
Maximum Random Read Rate90000 IOPS
Maximum Random Write Rate220000 IOPS
Maximum Sequential Read Rate1500 MB/s
Maximum Sequential Write Rate1000 MB/s
Total Bytes Written (TBW)100 TB
M.2 Interface Quantity1
Erori nereparabile1 per 10^15
Timpul presupus intre caderi1600000 h
Solid State Drive FeaturesAES 256-bit Encryption
End-to-End Data Protection
Intel Rapid Start Technology
Toleranta la soc in mod operare1000G
Toleranta la soc stocare1000G
Toleranta la vibratii in operare2.17G
Toleranta la vibratii stocare3.13G
Consumul maxim de putere0.1 W
Consumul minim de putere0.04 W
Temperatura ambientală maximă de funcționare70 °C
Temperatura ambientală minimă de funcționare0 °C
Produse returnabile aflate in garantieYes
Termen garantie (luna)60 luni
Criterii de validare a garantieiSerial Number
Greutatea bruta a pachetului0.1 kg
Bucati in pachet1
Pachete (colete) in cutie1
Tip pachetRetail
EAN Code5032037131568
Product Details
INTEL
SSDPEKNW512G8X1 A
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Intel SSD 660p Series (512GB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack

Intel SSD 660p Series (512GB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack

Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate90000 IOPSMaximum Random Write
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